4/9/2007 – Electronic News
TSMC sets September production date for 45-nm
By Colleen Taylor, Contributing Editor — Electronic News, 4/9/2007

Leading foundry Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) today announced that it is on track to complete its 45-nm technology qualification and enter production as early as September.

According to the company, the new 45-nm process combines the most advanced 193-nm immersion photolithography, competitive performance-enhancing silicon strains, and extreme low-k (ELK) inter-metal dielectric material.
TSMC’s 45-nm low power process purportedly provides twice the density of 65-nm with what the company said is significantly lower power and manufacturing cost per die. End products are expected to achieve 40 percent greater functionality or 40 percent smaller die size, with reduced power consumption, TSMC said.
TSMC further said its 45-nm general purpose and high performance process provides more than double the density and a greater than 30 percent speed enhancement over the previous generation at similar leakage power.

United Microelectronics Corp. (UMC), TSMC’s chief rival, said in November it had produced working 45-nm SRAM ICs, but did not set a date for when they would be available on the market. Meanwhile, Santa Clara, Calif.-based chipmaker Intel Corp. has said that it is on track to achieve shipments of its own 45-nm “Penryn” chips in the second half of 2007. http://www.edn.com/article/CA6396465.html